Article

Obliquely deposited CdTe:In films with anomalous photovoltaic properties

M. A. KarimovFergana State University, Fergana, UzbekistanN. Kh. YuldashevFergana State University, Fergana, Uzbekistan

Bulletin of the Russian Academy of Sciences Physicsjournal2007en

ABI

Abstract

A technology of doping of photovoltaically anomalous polycrystalline CdTe films with indium is developed, which makes it possible to increase the photovoltage by an order of magnitude and the short-circuit current by more than two orders of magnitude. This effect, which was observed for the first time in CdTe:In films, is explained by the asymmetric thermofield migration of In+i ions and cadmium vacancies V Cd − in the crystal field of grain boundaries during the heat treatment

Topics

Advanced Semiconductor Detectors and Materials Chalcogenide Semiconductor Thin Films Thermography and Photoacoustic Techniques

Identifiers

DOI: 10.3103/s1062873807080291

Citations and references

Cited by 70 references

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