A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers
S.C. JainDepartment of Electrical and Computer Engineering, University of Waterloo, Ontario, Canada N2L 3G1D.J. RoulstonDepartment of Electrical and Computer Engineering, University of Waterloo, Ontario, Canada N2L 3G1
1991en
ABI
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Cited by 20 references