Article

Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy

Rusen YanDepartment of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United StatesJeffrey R. SimpsonDepartment of Physics, Astronomy, and Geosciences, Towson University, Towson, Maryland 21252, United StatesSimone BertolazziElectrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandJacopo BrivioElectrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandMichael WatsonDepartment of Physics, Astronomy, and Geosciences, Towson University, Towson, Maryland 21252, United StatesXufei WuDepartment of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United StatesAndrás KisElectrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, SwitzerlandTengfei LuoDepartment of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United StatesAngela R. Hight WalkerSemiconductor and Dimensional Metrology Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United StatesHuili Grace XingDepartment of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

2013en

ABI

Abstract

Atomically thin molybdenum disulfide (MoS2) offers potential for advanced devices and an alternative to graphene due to its unique electronic and optical properties. The temperature-dependent Raman spectra of exfoliated, monolayer MoS2 in the range of 100-320 K are reported and analyzed. The linear temperature coefficients of the in-plane E2g 1 and the out-of-plane A1g modes for both suspended and substrate-supported monolayer MoS2 are measured. These data, when combined with the first-order coefficients from laser power-dependent studies, enable the thermal conductivity to be extracted. The resulting thermal conductivity κ = (34.5(4) W/mK at room temperature agrees well with the first principles lattice dynamics simulations. However, this value is significantly lower than that of graphene. The results from this work provide important input for the design of MoS2-based devices where thermal management is critical.

Identifiers

DOI: 10.1021/nn405826k

Citations and references

Cited by 40 references

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