Fundamental physicochemical regularities of the chemical vapor deposition of nickel oxide layers
Аnastasia KondratevaPeter the Great St. Petersburg Polytechnic University, ul. Politekhnicheskaya 29/1, St. Petersburg, 195251, RussiaSergey AlexandrovPeter the Great St. Petersburg Polytechnic University, ul. Politekhnicheskaya 29/1, St. Petersburg, 195251, Russia
2016en
ABI
Abstract
Physicochemical regularities of the chemical vapor deposition (CVD) of nickel oxide layers in the (EtCp)2Ni–O3–O2–Ar reaction system at a reduced pressure were studied. Dependences of growth rate of NiO layers on deposition temperature, linear gas flow velocity, and roughness were derived. A mass-spectrometric study of the composition of the reaction gas phases formed in these systems provided evidence about the fundamental physicochemical regularities of the CVD process, which is important for solving applied problems associated with the development of technological equipment and industrial technology for deposition of NiO layers.
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