Article

Electrochemical Fabrication of CdS Nanowire Arrays in Porous Anodic Aluminum Oxide Templates

Dmitri RoutkevitchDepartment of Chemistry, Department of Electrical Engineering, and the Ontario Laser and Lightwave Research Centre, University of Toronto, Toronto, Ontario M5S 1A1, CanadaTerry P. BigioniDepartment of Chemistry, Department of Electrical Engineering, and the Ontario Laser and Lightwave Research Centre, University of Toronto, Toronto, Ontario M5S 1A1, CanadaMartin MoskovitsDepartment of Chemistry, Department of Electrical Engineering, and the Ontario Laser and Lightwave Research Centre, University of Toronto, Toronto, Ontario M5S 1A1, CanadaJing XuDepartment of Chemistry, Department of Electrical Engineering, and the Ontario Laser and Lightwave Research Centre, University of Toronto, Toronto, Ontario M5S 1A1, Canada

1996en

ABI

Abstract

A technique is described for fabricating arrays of uniform CdS nanowires with lengths up to 1 μm and diameters as small as 9 nm by electrochemically depositing the semiconductor directly into the pores of anodic aluminum oxide films from an electrolyte containing Cd2+ and S in dimethyl sulfoxide. The nanowire arrays were characterized by powder X-ray diffraction (XRD) and electron microscopy. The deposited material is found to be hexagonal CdS with the crystallographic c-axis preferentially oriented along the length of the pore. The effects of annealing on the crystallinity of the deposited semiconductor were investigated by XRD and resonance Raman spectroscopy. The deposition technique is, in principle, generalizable as a means of fabricating nanowires of a wide range of semiconductors.

Identifiers

DOI: 10.1021/jp952910m

Citations and references

Cited by 20 references

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