Skip to main content
Article

Theoretical investigation on the multifunctional attributes of RhHfX (X=P, As) half Heusler semiconductor for advanced technological applications

Nazia IramComputational Materials Physics Laboratory, Institute of Physics (IoP), Bahauddin Zakariya University, (60800) Multan, PakistanRamesh SharmaDepartments of Applied Science, Feroze Gandhi Institute of Technology, Raebareli, U.P IndiaJaved AhmadComputational Materials Physics Laboratory, Institute of Physics (IoP), Bahauddin Zakariya University, (60800) Multan, PakistanSaba KhalidComputational Materials Physics Laboratory, Institute of Physics (IoP), Bahauddin Zakariya University, (60800) Multan, PakistanMeznah M. AlanaziDepartment of Physics, College of Science, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi Arabia
2025en
ABI

Abstract

No abstract available.

Identifiers

Citations and references

Cited by 20 references