Article

Radiation-enhanced dislocation glide in 4H-SiC at low temperatures

E. E. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE. B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, RussiaE.B. YakimovInstitute of Microelectronics Technology RAS, Acad. Osipian str., 6, Chernogolovka, 142432, Russia

2020en

ABI

Abstract

No abstract available.

Identifiers

DOI: 10.1016/j.jallcom.2020.155470

Citations and references

Cited by 20 references

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