Temperature Measurement of a Nanowire SOI Transistor Using a Parallel Gated SOI PIN Diode
Felipe Rodrigues Gare CarnielliCentro Universitário FEI - BrazilMarcelo Antonio PavanelloCentro Universitário FEI - Brazil
2024en
ABI
Abstract
This paper outlines a technique for measuring the temperature rise in a nanowire SOI MOSFET, caused by the self-heating effect, utilizing a parallel gated PIN diode. The analysis is conducted through electrothermal 3D TCAD simulations across an environment temperature range of 300K to 600K. Additionally, the impact of the separation distance between the nanowire MOSFET and the PIN diode is thoroughly examined.
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