Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
Britton W. H. BaugherDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAHugh ChurchillDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAYafang YangDepartment of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USAPablo Jarillo‐Herrero
2014en
ABI
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Cited by 40 references