Magnetic field sensor based on compensated silicon
М. К. БахадырхановTashkent State Technical University, Tashkent, UzbekistanХ. М. ИлиевTashkent State Technical University, Tashkent, UzbekistanK. S. AyupovTashkent State Technical University, Tashkent, UzbekistanO. É. SattorovTashkent State Technical University, Tashkent, Uzbekistan
ABI
Abstract
The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed.