New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
K. von KlitzingPhysikalisches Institut der Universität Würzburg, D-8700 Würzburg, Federal Republic of Germany, and Hochfeld-Magnetlabor des Max-Planck-Instituts für Festkörperforschung, F-38042 Grenoble, FranceG. DordaPhysikalisches Institut der Universität Würzburg, D-8700 Würzburg, Federal Republic of Germany, and Hochfeld-Magnetlabor des Max-Planck-Instituts für Festkörperforschung, F-38042 Grenoble, FranceM. PepperPhysikalisches Institut der Universität Würzburg, D-8700 Würzburg, Federal Republic of Germany, and Hochfeld-Magnetlabor des Max-Planck-Instituts für Festkörperforschung, F-38042 Grenoble, France
1980en
ABI
Abstract
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
Identifiers
Citations and references
Cited by 50 references