GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
D. S. AbramkinInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaМ. О. ПетрушковInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaМ. А. PutyatoInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaB. R. SemyaginInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaE. A. EmelyanovInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaВ. В. ПреображенскийInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaА. К. ГутаковскийInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaТ. С. ШамирзаевInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia
2019en
ABI
Abstract
Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
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