Intrinsic Performance of InAs Nanowire Capacitors
Kristofer JanssonDepartment of Electrical and Information Technology, Lund University, Lund, SwedenErik LindDepartment of Electrical and Information Technology, Lund University, Lund, SwedenLars‐Erik WernerssonDepartment of Electrical and Information Technology, Lund University, Lund, Sweden
2014en
ABI
Abstract
The intrinsic properties of vertical InAs nanowire (NW) capacitors are investigated. The band structure is simulated using a Schrödinger-Poisson solver, taking the conduction band nonparabolicity into account. This is combined with a distributed RC model to simulate the current-voltage characteristics. It is found that the influence from the nonparabolicity is substantial for devices with a small nanowire diameter, resulting in an increased carrier concentration, a shift in the threshold voltage, and a higher intrinsic capacitance. These NW capacitors may be a suitable alternative in high frequency applications approaching 100 GHz, while maintaining a quality factor above 100.
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