Magnetoelectric control of domain walls in a ferrite garnet film
А. С. ЛоггиновMoscow State University, Moscow, 119992, RussiaG. A. MeshkovMoscow State University, Moscow, 119992, RussiaА. В. НиколаевMoscow State University, Moscow, 119992, RussiaA. P. PyatakovMoscow State University, Moscow, 119992, Russia
2007en
ABI
Abstract
A displacement of magnetic domain walls under the effect of an electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) orientation). The displacement of the domain walls changes to the opposite when the electric field changes sign, and it is independent of the direction of magnetization in the domains. The mechanism proposed for explaining the observed phenomenon is based on the inhomogeneous magnetoelectric effect.
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Cited by 20 references