X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals
I. L. Shul’pinaIoffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaR. N. KyuttIoffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaВ. В. РатниковIoffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaI. A. ProkhorovResearch Center Space Materials Science, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Kaluga, RussiaI. Zh. BezbakhResearch Center Space Materials Science, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Kaluga, RussiaM. P. ShcheglovRussian Academy of Sciences
2010en
ABI
Abstract
Si(As, P, B) and GaSb(Si) single crystals are used as examples to demonstrate the possibilities of methods of X-ray diffraction for the diagnostics (examination of a real structure) of highly doped semiconductor crystals. Prominence is given to characterizing the state of impurity: whether it is in a solid solution or at a certain stage of its decomposition. An optimum combination of X-ray diffraction methods is found to obtain the most complete information on the microsegregation and structural heterogeneity in crystals with low and high X-ray absorption. This combination is based on X-ray diffraction topography and X-ray diffractometry methods having an increased sensitivity to lattice strains.
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