Ideal 4H-SiC pn junction and its characteristic shunt
Anatoly M. Strel’chukA.F. Ioffe Physico-Technical Institute Russian Academy of Science, Politechnicheskaya 26, St. Petersburg 194021, RussiaN.S. SavkinaA.F. Ioffe Physico-Technical Institute Russian Academy of Science, Politechnicheskaya 26, St. Petersburg 194021, Russia
2001en
ABI
Abstract
No abstract available.
Identifiers
Citations and references
Cited by 30 references