Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

Abstract

This paper examines the mechanisms underlying the formation of Mn and Ni impurity microassociates in Si. Thermodynamic analysis of Si〈Mn〉 and Si〈Ni〉 suggests that the formation of various types of microassociates is mainly due to internal Coulomb forces. Theoretical models for the formation of microassociates adequately describe impurity microassociates revealed in silicon by IR microscopy, X-ray diffraction, and electron probe microanalysis.

Identifiers

DOI

10.1134/s0020168512110192

Citations and references