X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates
Jean‐Baptiste RodriguezCNRS, IES, UMR 5214, F-34000 Montpellier, FranceK. MadiomananaCNRS, IES, UMR 5214, F-34000 Montpellier, FranceL. CeruttiCNRS, IES, UMR 5214, F-34000 Montpellier, FranceA. CastellanoCNRS, IES, UMR 5214, F-34000 Montpellier, FranceE. TourniéCNRS, IES, UMR 5214, F-34000 Montpellier, France
2016en
ABI
Abstract
No abstract available.
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Citations and references
Cited by 20 references