Thermal conductivity of individual silicon nanowires
Deyu LiDepartment of Mechanical Engineering, University of California, Berkeley, California 94720Yiying WuDepartment of Chemistry, University of California, Berkeley, California 94720Philip KimDepartment of Physics, Columbia University, New York, New York 10027Li ShiDepartment of Mechanical Engineering, University of Texas, Austin, Texas 78712Peidong YangDepartment of Chemistry, University of California, Berkeley, California 94720Arun MajumdarDepartment of Mechanical Engineering, University of California, Berkeley, California 94720
2003en
ABI
Abstract
The thermal conductivities of individual single crystalline intrinsic Si nanowires with diameters of 22, 37, 56, and 115 nm were measured using a microfabricated suspended device over a temperature range of 20–320 K. Although the nanowires had well-defined crystalline order, the thermal conductivity observed was more than two orders of magnitude lower than the bulk value. The strong diameter dependence of thermal conductivity in nanowires was ascribed to the increased phonon-boundary scattering and possible phonon spectrum modification.
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