Resonant interband tunnel diodes with AlGaSb barriers
R. MagnoNaval Research Laboratory, Washington, DC 20375-5347Allan S. BrackerNaval Research Laboratory, Washington, DC 20375-5347B. R. BennettNaval Research Laboratory, Washington, DC 20375-5347
2001en
ABI
Abstract
The peak current density of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes has been enhanced by replacing the AlSb barriers with Al1−xGaxSb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x=0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.
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