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Work: Type of Optical Transitions at the Fundamental Absorption Edge in TlGaSe2 and TlInS2 Crystals Subjected to γ-Radiation

  1. Influence of electron irradiation on the band gap and microhardness of TlInS <sub>2</sub> , TlInSSe and TlIn <sub>0.99</sub> Cr <sub>0.01</sub> S <sub>2</sub> single crystals

    F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

    ArticleSolid-state spectroscopy and crystallographyMaterials Research Innovations20243 citations
    ABI

  2. Influence of 2 MeV electron irradiation on the band gap of TlGaS2 and TlGaSe2 single crystals

    S. Kh. Umarov, N. Z. Gasanov, F. K. Khallokov +2

    ArticleSolid-state spectroscopy and crystallographySolid State Communications20250 citations
    ABI