The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

Abstract

Solid state thermal diffusion is not a common method of impurity doping in silicon carbide (SiC) device fabrication due to the extremely high temperatures required for such a process to occur. We have recently reported that solid state impurity doping by thermal diffusion in SiC is possible if there is a parallel mechanism, such as oxidation or silicidation that creates silicon or carbon vacancies, which then allows dopant impurities to diffuse into these vacancies. This paper describes the experimental procedures by which oxidation and silicidation can be used to generate vacancies and enhance impurity doping at temperatures below 1400 ºC. Keywords: silicon carbide, impurity, doping, diffusion DOI:10.14331/ijfps.2013.330059

Identifiers

DOI

10.14331/ijfps.2013.330059

Citations and references