Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface
S. B. DonaevTashkent State Technical University, 100095, Tashkent, Uzbekistan
ABI
Abstract
The morphology, composition, and electronic properties of CoSiO films formed on a CoSi2/Si(111) substrate surface by $${\text{O}}_{2}^{ + }$$ ion implantation followed by thermal annealing have been studied. Energy band structure parameters are determined, and information on the density of electron states in the valence and conduction bands is obtained. The bandgap width of a CoSiO film is estimated at ~2.4 eV.