Double Sided Diffusion and Drift of Lithium Ions on Large Volume Silicon Detector Structure

Abstract

This paper deals with development technology and fabrication of large sized silicon detector structures. New method of double sided diffusion and drift of lithium ions for formation big sized Si (Li) p-i-n structures is offered. It was shown that the compensation time in predetermined volume can be reduced by this method. Also, the basic results of I- V, C – V and Energy resolution characteristics of Si (Li) p-i-n structures, for various resistivity were illustrated.

Identifiers

DOI

10.5573/jsts.2017.17.5.591

Citations and references