Article

Ag-Doped Halide Perovskite Nanocrystals for Tunable Band Structure and Efficient Charge Transport

Shu ZhouDepartment of Physics, The Chinese University of Hong Kong, New Territories, Hong KongYaping MaDepartment of Physics, The Chinese University of Hong Kong, New Territories, Hong KongGuodong ZhouDepartment of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong KongXin XuDepartment of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong KongMinchao QinDepartment of Physics, The Chinese University of Hong Kong, New Territories, Hong KongYuhao LiDepartment of Physics, The Chinese University of Hong Kong, New Territories, Hong KongYao‐Jane HsuNational Synchrotron Radiation Research Center, Hsinchu 30076, TaiwanHanlin HuDepartment of Electronic and Information Engineering, Hong Kong Polytechnic University, Hong Hum, Kowloon, Hong KongGang LiDepartment of Electronic and Information Engineering, Hong Kong Polytechnic University, Hong Hum, Kowloon, Hong KongNi ZhaoDepartment of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong KongJianbin XuDepartment of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong KongXinhui LuDepartment of Physics, The Chinese University of Hong Kong, New Territories, Hong Kong

2019en

ABI

Abstract

Heterovalent doping of halide perovskite nanocrystals (NCs), offering potential tunability in optical and electrical properties, remains a grand challenge. Here, we report for the first time a controlled doping of monovalent Ag+ into CsPbBr3 NCs via a facile room-temperature synthesis method. Our results suggest that Ag+ ions act as substitutional dopants to replace Pb2+ ions in the perovskite NCs, shifting the Fermi level down toward the valence band and in turn inducing a heavy p-type character. Field effect transistors fabricated with Ag+-doped CsPbBr3 NCs exhibit 3 orders of magnitude enhancement in hole mobility at room temperature, compared with undoped CsPbBr3 NCs. Low-temperature electrical studies further confirm the influence of Ag+ doping on the charge-carrier transport. This work demonstrates the tunability of heterovalent doping on the electrical properties of halide perovskite NCs, shedding light on their future applications in versatile optoelectronic devices.

Identifiers

DOI: 10.1021/acsenergylett.8b02478

Citations and references

Cited by 20 references

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