Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures
Yoshihiko KanemitsuGraduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, JapanTakashi KushidaGraduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
2000en
ABI
Abstract
We have studied size effects on the photoluminescence (PL) spectrum in amorphous silicon (a-Si)-based multilayer structures. At low temperatures, the PL spectrum and the PL lifetime are sensitive to the a-Si well thickness in a-Si/SiO2 multilayers. With a decrease of the a-Si well thickness, the PL peak energy and the mobility edge shift to higher energy. The temperature dependence of the PL spectrum shows that the size-dependent visible luminescence is ascribed to radiative recombination of carriers localized in the band-tail state, rather than the band-edge emission in quantum-confined states. The quantum confinement and localization of carriers in the band-tail states will be discussed.
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