Formation of selenium-containing complexes in silicon
A. A. TaskinInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, RussiaE. G. TishkovskiǐInstitute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia
2002en
ABI
Abstract
The results of studying the formation of selenium-related complexes in silicon are reported. On the basis of analyzing the kinetics of the donor-center formation, the composition of the simplest complexes and the main parameters of their formation were determined. The polymerization process Se + Se n−1 ↔ Sen of selenium atoms was analyzed; this analysis made it possible to describe quantitatively the features of in-diffusion of selenium atoms from the implanted region to the crystal bulk. The equilibrium solubility of selenium in silicon is regarded as a result of the formation of monomers with limited concentration in the course of formation of the complexes.
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