The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures
B. PavlykIvan Franko National University, Lviv, 79000, UkraineA. S. HrypaIvan Franko National University, Lviv, 79000, UkraineDmytro SlobodzyanIvan Franko National University, Lviv, 79000, UkraineR. M. LysIvan Franko National University, Lviv, 79000, UkraineJ. A. ShykoryakIvan Franko National University, Lviv, 79000, UkraineR. I. DidykIvan Franko National University, Lviv, 79000, Ukraine
2011en
ABI
Abstract
The effects of reconstruction of structural defects at the semiconductor-metal interface caused by a magnetic field are detected. The analysis of the current-voltage and capacitance-voltage characteristics is indicative of a magnetically stimulated increase in the positive charge of the dielectric layer and also a change in the density of surface states depending on the degree of doping of semiconductors under investigation.
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