Two-dimensional microstructures induced by femtosecond vector light fields on silicon
Kai LouMOE Key Laboratory of Weak Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaSheng-Xia QianMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaXi‐Lin WangMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaYongnan LiMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaBing GuMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaChenghou TuMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, ChinaHui‐Tian WangMOE Key Laboratory of Weak-Light Nonlinear Photonics and School of Physics, Nankai University, Tianjin 300071, China
2011en
ABI
Abstract
We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure.
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