Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. CheungDepartment of Material Science and Engineering, University of California, Berkeley, California 94720N.W. CheungDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720
1986en
ABI
Abstract
It is shown that by using the forward current density-voltage (J-V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I-V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.
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