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Work: Influence of the parameters to transition capacitance at nCdS-pSi heterostructure
Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov
ArticleAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20252 citationsABI