Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Matthew A. PanzerMechanical Engineering Department, University of Stanford, Stanford, CA, USAMichael ShandalovMaterial Science and Engineering Department, University of Stanford, Stanford, CA, USAJeremy RowletteMechanical Engineering Department, University of Stanford, Stanford, CA, USAYasuhiro OshimaMaterial Science and Engineering Department, University of Stanford, Stanford, CA, USAYi‐Wei ChenMaterial Science and Engineering Department, University of Stanford, Stanford, CA, USAPaul C. McIntyreMaterial Science and Engineering Department, University of Stanford, Stanford, CA, USAKenneth E. GoodsonMechanical Engineering Department, University of Stanford, Stanford, CA, USA
2009en
ABI
Abstract
Thin-film HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56-200-Aring-thick HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films. A picosecond pump-probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(mmiddotK). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.
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Cited by 40 references