Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD
A V UvarovAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaA I BaranovAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaEkaterina VyacheslavovaAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaN. A. KalyuzhnyĭIoffe Institute, 194021, St. Petersburg, RussiaD. A. KudryashovAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaA. A. MaksimovaAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaI. A. MorozovAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, RussiaS. А. MintairovIoffe Institute, 194021, St. Petersburg, RussiaR. А. SaliiIoffe Institute, 194021, St. Petersburg, RussiaА.С. ГудовскихAlferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2021en
ABI
Abstract
The possibility of creating a lower junction for the multijunction A3B5/Si-type solar cells based on the n-GaP/p-Si heterostructure grown by the combined method of plasma enhanced atomic-layer deposition and metalorganic vapor-phase epitaxy is demonstrated for the first time at temperature Ts not exceeding 650°C. The photoelectric properties of the structures grown at Ts ≤ 650°C depend on the process conditions—in particular, on the use of additional treatment in Ar plasma.
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