Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au
Abstract
The results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions. Photodiode heterostructures with an area of 29 mm2 were created, which were obtained by vacuum evaporation in a quasi-closed volume by depositing layers of cadmium sulfide and cadmium telluride onto a single-crystalline silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au-nCdS-nSi-pCdTe-Au structures is two-way sensitivity, where impurity complexes are formed. In the structures, the rate of recombination of nonequilibrium carriers at low excitation levels is determined by simple local centers in the boundary transition layers. The band diagram of a multilayer photodiode structure Au-nCdS-nSi-pCdTe-Au has been constructed.