Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes
Aseel A. KareemDepartment of Physics, College of Science, University of Baghdad, Baghdad, IraqHussein Kh. RasheedDepartment of Physics, College of Science, University of Baghdad, Baghdad, IraqAnji Reddy PoluSun Theo Constan Lotebulo NdruruResearch Center for Chemistry, National Research and Innovation Agency (BRIN) KST B. J. Habibie, Tangerang Selatan, Banten, 15314, IndonesiaК. Ш. РабадановDagestan Federal Research Centre of the Russian Academy of Sciences, Analytical Center for Collective Use, Makhachkala, Russian FederationThamer AlomayriDepartment of Physics, Faculty of Applied Science, Umm Al-Qura University, Makkah, 21955, Saudi Arabia
2023en
ABI
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Cited by 20 references