A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation
Jingxuan HeSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaYe ShenSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaBo LiSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaXia XiangSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaSean LiSchool of Materials Science and Engineering, The University of New South Wales, Sydney, 2052, AustraliaXuan FangState Key Laboratory of High-Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun, 130022, ChinaHaiyan XiaoSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaXiaotao ZuSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, ChinaLiang QiaoSchool of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
2020en
ABI
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Cited by 30 references