Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition
Kazunori MinegishiDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, JapanYasushi Koiwai Yasushi KoiwaiDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, JapanYukinobu Kikuchi Yukinobu KikuchiDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, JapanKoji YanoDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, JapanMasanobu KasugaDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, JapanAzuma ShimizuDepartment of Electrical Engineering and Computer Science, Yamanashi University, 4 Takeda, Kofu 400, Japan
1997en
ABI
Abstract
The growth of p-type ZnO film was realized for the first time by the simultaneous addition of NH 3 in carrier hydrogen and excess Zn in source ZnO powder. The resistivity was typically 100 Ω·cm. A model showing nitrogen incorporation suggests the possibility of realizing p-type ZnO film of low resistivity by optimizing thermal annealing.
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