Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
Tadatsugu MinamiElectron Device System Laboratory, Kanazawa Institute of TechnologyHirotoshi SatoElectron Device System Laboratory, Kanazawa Institute of TechnologyHidehito NantoElectron Device System Laboratory, Kanazawa Institute of TechnologyShinzo TakataElectron Device System Laboratory, Kanazawa Institute of Technology
1985en
ABI
Abstract
The detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described. The resistivity is lowered by doping of B, Al, Ga and In into ZnO films. The characteristic features of ZnO films doped with group III elements except for B are their high carrier concentration and low mobility. Variation of the mobility with the impurity content is roughly governed by the ionized impurity scattering. It is shown that the doped ZnO films exhibit the resistivity dependence on film thickness below 300 nm.
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