Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information
A. GieseInstitut für Materialphysik, Universität Münster, Wilhelm-Klemm-Strasse 10, 48149 Münster, GermanyN. A. StolwijkInstitut für Materialphysik, Universität Münster, Wilhelm-Klemm-Strasse 10, 48149 Münster, GermanyH. BrachtInstitut für Materialphysik, Universität Münster, Wilhelm-Klemm-Strasse 10, 48149 Münster, Germany
2000en
ABI
Abstract
Diffusion of Cu and Ni into Ge was investigated between 700 and 900 °C with the aid of rapid isothermal lamp annealing and spreading-resistance profiling. Using low-dislocation-density single-crystal Ge wafers with a backside gold layer, we observed typical double-hump diffusion profiles of both Cu and Ni. These profiles can be described within the dissociative model by taking into account that the front surface acts as source for both vacancies (V) and Cu or Ni while the back surface combines the V-source feature with a Cu, Ni-sink property. Profile fitting yields data regarding the V-assisted Ge self-diffusion coefficient and the equilibrium concentration of vacancies as a function of temperature.
Identifiers
Citations and references
Cited by 20 references