Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium
N. FukuokaDepartment of Physics, Faculty of Science, Naruto University of Education, Naruto, Tokushima 772, JapanH. YamajiDepartment of Physics, Faculty of Science, Naruto University of Education, Naruto, Tokushima 772, JapanM. HondaDepartment of Physics, Faculty of Science, Naruto University of Education, Naruto, Tokushima 772, JapanK. AtobeDepartment of Physics, Faculty of Science, Naruto University of Education, Naruto, Tokushima 772, Japan
1992en
ABI
Abstract
Abstract Point defects produced by neutron, electron or γ-ray irradiation were studied by electrical measurements. The defect levels were analyzed by DLTS technique. Annealing of radiation induced defects at about 260°C was obtained in 20 min isochronal annealings. Annealed fraction of the 260°C stage was obtained to be 85% in arsenic-doped crystals and independent of the species of irradiating particle. The value in antimony-doped and oxygen-doped specimens were 25 and 70%, respectively. The activation energy was found to be 1.6 eV and the annealing kinetics were first order. A tentative model for the defect responsible at the 260°C stage is a vacancy complex.
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