Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Abstract

InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way depending on the growth conditions. The physical properties: x ray, transmission electron microscopy, and photoluminescence were used to characterize the different growth processes.

Identifiers

DOI

10.1063/1.96342

Citations and references