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Boron and aluminum diffusion into 4H–SiC substrates

Andrzej KubiakTechnical University of Lodz, Department of Semiconductor and Optoelectronic Devices, Wolczanska 211/215, 90-924 Lodz, PolandJacek RogowskiTechnical University of Lodz, Zeromskiego 116, 90-924 Lodz, Poland
2010en
ABI

Abstract

No abstract available.

Identifiers

DOI
10.1016/j.mseb.2010.06.022

Citations and references

Cited by 20 references
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