Article

High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

Shey‐Shi LuDepartment of Electrical Engineering, National Taiwan University, Taipei, TaiwanChibing HuangDepartment of Electrical Engineering, National Taiwan University, Taipei, Taiwan

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ABI

Abstract

A Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor (HBT) grown on a

Identifiers

DOI: 10.1109/55.145025

Citations and references

Cited by 20 references

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