Peculiarities of solar elements based on narrow-band-gap semiconductors
М. С. СаидовPhysics-Sun Applied Physics Institute, Scientific Production Association, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan
ABI
Abstract
Ideas concerning the development of solar elements with structures consisting of a p-n junction on a narrow-band-gap semiconductor and a cascade of frontal p-p heterojunctions on wide-band-gap semi-conductors, as well as the possibility of multiple generation of electron-hole pairs as the result of acceleration of photoelectrons in the fields of p-p heterojunctions, are proposed. The approximate evaluation of the efficiency of these solar elements shows that they can be more effective than silicon solar elements.