Transition layer formation simulation during film deposition by an ion-molecular beam
Abstract
Abstract Computer simulation of transition layer formation during film deposition with simultaneous bombardment was carried out on the basis of the Monte Carlo method. The code “CASCADE F” permits the change in concentration profiles of the components that enter into the composition of the film and the substrate during film growth to be obtained. Transition layer properties during Ti and TiN deposition on a-Fe with simultaneous bombardment by 0.5–5 keV Ti+ and N+ ions are considered. The dependence of the number of film atoms transferred to the substrate and vice versa on the film thickness and ion energy was obtained. It is shown that the efficiency of cascade mixing during deposition with simultaneous bombardment is much higher than for ion bombardment of primarily deposited coatings. The destruction of an oxide film during ion-molecular beam deposition is considered. As an example we take aluminium contacts deposited on Si coated by a thin layer of Si02.