Possibilities of increasing the efficiency of Si and CuInSe2 solar cells

Abstract

The paper proposes a method of increasing the efficiency of Si and CuInSe2 solar cells using the impact ionization and impurity photovoltaic effect in pZnTe-pSi-nSi and pZnTe-pCuInSe2-n(CuInSe2)1−x (2InAs) x structures.

Identifiers

DOI

10.3103/s0003701x11030169

Citations and references