Is it possible to carry out impact ionization in the narrow energy gap of p-p, n-n heterojunctions and increase the efficiency of thin-film solar cells?
М. С. СаидовApplied Physics Institute, NPO Physics of the Sun, Uzbek Academy of Sciences, ul. Mavlyanova 25, Tashkent, 700084, Uzbekistan
ABI
Abstract
We try to justify the idea that it is possible to implement impact ionization and generate additional electron-hole pairs in the narrow energy-gap layer by accelerating the high energy-gap photoelectrons by the field of a p-p, n-n heterojunction barrier and by increasing the efficiency of thin-film solar cells. We investigate whether impact ionization in the GaSb layer of a p-CdTe-p-GaSb heterojunction is possible and whether it is possible to increase the efficiency of a CdTe solar cell up to 50%.