Growth and characterization of CoSi2 films on Si (100) substrates
Fumitoshi TakahashiDepartment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182-8585, JapanTetsuji IrieDepartment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182-8585, JapanJi ShiDepartment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182-8585, JapanM. HashimotoDepartment of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1, Chofugaoka, Chofu-shi, Tokyo 182-8585, Japan
2001en
ABI
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