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Work: The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

  1. Electronics based on two-dimensional materials

    Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone +5

    Article20142 citations
    ABI
  2. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2

    Article20162 citations
    ABI
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    Other1 citations
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