Structure and photoluminescent properties of SiC layers on Si, synthesized by pulsed ion-beam treatment
R. M. BayazitovRadiation Physics Laboratory, Kazan Physical-Technical Institute of the Russian Academy of Sciences, Sibirsky trakt 10/7, Kazan 420029, RussiaИ. Б. ХайбуллинRadiation Physics Laboratory, Kazan Physical-Technical Institute of the Russian Academy of Sciences, Sibirsky trakt 10/7, Kazan 420029, RussiaR. I. BatalovRadiation Physics Laboratory, Kazan Physical-Technical Institute of the Russian Academy of Sciences, Sibirsky trakt 10/7, Kazan 420029, RussiaR. M. NurutdinovRadiation Physics Laboratory, Kazan Physical-Technical Institute of the Russian Academy of Sciences, Sibirsky trakt 10/7, Kazan 420029, RussiaL.Kh. AntonovaGeneral Physics Institute of RAS, Vavilov str. 38, Moscow 117942, RussiaV. P. AksenovGeneral Physics Institute of RAS, Vavilov str. 38, Moscow 117942, RussiaГ. Н. МихайловаGeneral Physics Institute of RAS, Vavilov str. 38, Moscow 117942, Russia
2003en
ABI
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Cited by 20 references